Fully automatic lifetime measurement system with epi/SOI wafer evaluation
LTA-2200EP/F

100mm / 125mm / 150mm / 200mm / 300mm

Bulk / Epi / Diff. / SOI 

Robot

Map / Arbitrary coordinate / taue tau1

FOUP

The system possesses the detection system of 349nm short wavelength lasers and 26GHz differential Micro-PCD, in addition to JEIDA Standard measurement system of laser wavelength 904nm, microwave frequency 9.6GHz.
Various wafer lifetime measurements are possible such as CZ, epi, diffusion and low resistivity wafers and Ultra thin SOI wafers.
Non-contact notch/orientation flat alignment, centering and cassette-to-cassette wafer transfer functions are equipped.
Lifetime map of 25 (26) wafers are continuously measured in full-automation.

The system supports 300mm FOUP cassete.
Fully automatic lifetime measurement system with epi/SOI wafer evaluation
LTA-2200EP

100mm / 125mm / 150mm / 200mm / 300mm

Bulk / Epi / Diff. / SOI 

Robot

Map / Arbitrary coordinate / taue tau1

Open

The system possesses the detection system of 349nm short wavelength lasers and 26GHz differential Micro-PCD, in addition to JEIDA Standard measurement system of laser wavelength 904nm, microwave frequency 9.6GHz.
Various wafer lifetime measurements are possible such as CZ, epi, diffusion and low resistivity wafers and Ultra thin SOI wafers.
Non-contact notch/orientation flat alignment, centering and cassette-to-cassette wafer transfer functions are equipped.
Lifetime map of 25 (26) wafers are continuously measured in full-automation.
Fully automatic lifetime measurement system with epi/SOI wafer evaluation
LTA-2000EP

100mm / 125mm / 150mm / 200mm

Bulk / Epi / Diff. / SOI 

Robot

Map / Arbitrary coordinate / taue tau1

Open

The system possesses the detection system of 349nm short wavelength lasers and 26GHz differential Micro-PCD, in addition to JEIDA Standard measurement system of laser wavelength 904nm, microwave frequency 9.6GHz.
Various wafer lifetime measurements are possible such as CZ, epi, diffusion and low resistivity wafers and Ultra thin SOI wafers.
Non-contact notch/orientation flat alignment, centering and cassette-to-cassette wafer transfer functions are equipped.
Lifetime map of 25 (26) wafers are continuously measured in full-automation.
Lifetime measurement system with epi/SOI wafer evaluation
LTA-1510EP

100mm / 125mm / 150mm / 200mm

Bulk / Epi / Diff. / SOI 

Manual

Map / Arbitrary coordinate / taue tau1
 

The system possesses the detection system of 349nm short wavelength lasers and 26GHz differential Micro-PCD, in addition to JEIDA Standard measurement system of laser wavelength 904nm, microwave frequency 9.6GHz.
Various wafer lifetime measurements are possible such as CZ, epi, diffusion and low resistivity wafers and Ultra thin SOI wafers.

By setting wafers to the measurement stage manually,lifetime map of the wafers are measured .
Evaluation system of low temperature poly silicon
LTA-2810SP

400mm x 500mm

Low temperature poly silicon 

Robot

Map / Arbitrary coordinate / peak

Custom

The system possesses the detection system of 349nm short wavelength lasers and 26GHz differential Micro-PCD.

Evaluation of low temperature poly silicon crystallinity are possible.

The 400mm x 500mm sheets transfered by robot from cassette are automatically measured.
Evaluation system of low temperature poly silicon and SiC
LTA-1800SP

<200mm square / Large size available

•]‰¿—̈æ Low temperature poly silicon / SiC  

Manual

Œv‘ª€–Ú Map / Arbitrary coordinate / taue tau1 peak

The system possesses the detection system of 349nm short wavelength lasers and 26GHz differential Micro-PCD.

Evaluation of poly silicon crystallinity and SiC are possible .
By setting wafers to the measurement stage manually, lifetime or peak map is measured.
The unit is suitable for off-line evaluation and study.

Iron concentration measurement system FE-2000 / FE-2200

Example of iron concentration measuring.

100mm / 125mm / 150mm / 200mm /
300mm* (*FE2200 only)


‘ÎÛ P type Wafer 

Auto

Œv‘ª€–Ú Map / Arbitrary coordinate / taue tau1

By dissociating Fe-B pairs to interstitials by light illumination, iron concentration is calculated by the lifetime before/after light illumination.
Iron concentration of arbitrary coordinate and iron concentration map of the whole wafer can be measured.
FE-2000/ 2200 is built in LTA-1510/1512/2000/2200/EP.

Model Wafer size(mm) Auto
meas.		 Corresponding models
100 125 150 200 300
FE-2000 - LTA-2000,2000EP
LTA-1510,1510EP
FE-2200 LTA-2200,2200EP
LTA-1512,1512EP
Corona charge unit CC-2000 / 2200


Before corona charging tau=3us

After corona charging tau=250us

100mm / 125mm / 150mm / 200mm /
300mm* (*CC2200 only)


Subject CZ / FZ / Epi / Diff. / SOI

Auto

Map / Arbitrary coordinate / taue tau1

By depositing ions generated by corona discharging to the wafer surface, carriers at the surface/interface are squeezed into inside region of wafer; therefore, bulk lifetime can be measured without influence of the fast recombination at surface/interface.
Even in case of OX film formation by RTO processing, bulk lifetime can be obtained.
The unit is mainly used in 300mm wafer sequential process.

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