Complying
with JEIDA Standard
KOBELCO's all lifetime measurement systems comply with JEIDA Standard
(53-1997) approved all over the world. |
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Multi-layer
wafer lifetime
By combining the short wavelength laser and differential detection,
lifetime of multi-layer wafers such as epi, diffusion and SOI wafers
can be measured.
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High-sensitivity, high speed
With the Micro-PCD Method which can detect contamination with high sensitivity
, lifetime map is obtained in a short time. |
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Iron
concentration measurement
By measuring and analyzing lifetime before/after light
illumination, iron concentration map can be obtained.
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Ample
measuring/indicating modes
Varied types of software can be used such as software
for mapping the whole wafer surface, partial measuring, partial display
and 3D indicating. |
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OX
film/silicon interface evaluation
By changing injected carrier concentration, contamination in the bulk
and trap concentration of OX film/silicon interface can be measured
separately. |
Evaluation of p-Si layer of LCD
By combing the short wavelength laser, differential detection
and signal processing, crystallinity of poly silicon layer of LCD can
be evaluated.
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Evaluation
of SiC
By
short wave length laser, lifetime of wide band gap semiconductor such
as SiC can be measured.
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